A 0.9 µm pixel size image sensor realized by introducing organic photoconductive film into the BEOL process

Author

Isono, S. ; Satake, Toshiaki ; Hyakushima, T. ; Taki, Kazuhiro ; Sakaida, R. ; Kishimura, S. ; Hirao, S. ; Nomura, Keigo ; Torazawa, N. ; Tsutsue, M. ; Ueda, Toshitsugu

Author_Institution

Semicond. Bus. Unit, Panasonic Corp., Toyama, Japan

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

A stacked image sensor with a 0.9 μm pixel size fabricated by using organic photoconductive film (OPF) was realized. It is the first trial to introduce an active material, that is, an organic semiconductor into the BEOL process. This pixel structure is fabricated by using a standard 45 nm BEOL process. However, after OPF deposition, it is essential to restrict the thermal budget and to avoid oxygen, moisture, and plasma irradiation. By controlling the above conditions, a demonstration of a stacked image sensor with OPF, which has high sensitivity, high saturation charge, and a wide incident light angle, was successfully performed.

Keywords

image sensors; photoconducting devices; photoconducting materials; photodetectors; thin film sensors; BEOL process; OPF deposition; image sensor; incident light angle; organic photoconductive film deposition; organic semiconductor; plasma irradiation; saturation charge; size 0.9 mum; size 45 nm; Crosstalk; Electrodes; Films; Image sensors; Leakage currents; Plugs; Process control;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615587

Filename

6615587