• DocumentCode
    3280828
  • Title

    Highly selective H2 gas sensors based on ZnO-modified SnO2 nanorod arrays

  • Author

    Huang, Hui ; Chow, C.L. ; Lee, Y.C. ; Lim, C.K. ; Tan, O.K.

  • Author_Institution
    Sensors & Actuators Lab., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2009
  • fDate
    25-28 Oct. 2009
  • Firstpage
    124
  • Lastpage
    126
  • Abstract
    In this work, uniform SnO2 nanorod arrays have been grown by plasma-enhanced chemical vapor deposition (PECVD). The SnO2 nanorods are about 5 nm at the tip, 20 nm in the bottom and 300 nm in length. The surface of the nanorods was modified by ZnO nanoclusters deposited by sputtering and by spin coating. The effects of ZnO surface modification on sensing properties of SnO2 nanorod arrays were investigated. The SnO2 nanorod array sensor modified with ZnO deposited by spin coating showed normal donor-like sensing response to CO gas, while it showed inverse acceptor-like sensing response up to 18.8 at 350 °C to 100 ppm H2 gas. Thus, highly selective sensors to H2 gas were exhibited.
  • Keywords
    II-VI semiconductors; carbon compounds; gas sensors; hydrogen; nanorods; nanosensors; sensor arrays; surface treatment; tin compounds; wide band gap semiconductors; zinc compounds; CO; H2; ZnO-SnO2; donor-like sensing response; highly selective gas sensors; inverse acceptor-like sensing response; nanoclusters; nanorod arrays; plasma-enhanced chemical vapor deposition; spin coating; sputtering; surface modification; temperature 350 degC; Chemical sensors; Chemical vapor deposition; Coatings; Gas detectors; Hydrogen; Plasma chemistry; Plasma temperature; Semiconductor nanostructures; Sensor arrays; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Sensors, 2009 IEEE
  • Conference_Location
    Christchurch
  • ISSN
    1930-0395
  • Print_ISBN
    978-1-4244-4548-6
  • Electronic_ISBN
    1930-0395
  • Type

    conf

  • DOI
    10.1109/ICSENS.2009.5398221
  • Filename
    5398221