Title :
Development of TSV simulator: FASTsv
Author :
Zhu, Fuyun ; Wang, Chen ; Yu, Min ; Zhao, Xin ; Jin, Yufeng ; Zhang, Haixia
Author_Institution :
Nat. Key Lab. of Nano/Micro Fabrication Technol., Peking Univ., Beijing, China
Abstract :
The increasing need for functionality and portability in consumer electronics is pushing the microelectronics industry to develop more effective interconnection techniques. This has resulted in the birth of 3D stacking of chips, which is achieved by the use of TSV (Through-Silicon-Via) technology. This paper puts forward a TSV simulator, FASTsv (Fast and Accurate Simulator of TSV: FASTsv). The key technologies in TSV process include DRIE (deep reactive ion etching) and PECVD (plasma-enhanced chemical vapor deposition) processes. Based on experimental results and theoretical analysis, the modeling of DRIE and PECVD processes are developed. Experimental tests are performed to verify the TSV simulator. The simulation results agree with experimental results very well.
Keywords :
chemical vapour deposition; integrated circuit interconnections; sputter etching; 3D stacking; FASTsv; TSV simulator; consumer electronics; deep reactive ion etching; interconnection techniques; microelectronics industry; plasma-enhanced chemical vapor deposition; through-silicon-via; Data models; Etching; Mathematical model; Polymers; Silicon; Sulfur hexafluoride; Through-silicon vias;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2011 IEEE International Conference on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-61284-775-7
DOI :
10.1109/NEMS.2011.6017333
