New fluorocarbon free chemistry proposed as solution to limit porous SiOCH film modification during etching

Author

Posseme, N. ; Vallier, L. ; Kao, C.-L. ; Licitra, C. ; Petit-Etienne, C. ; Mannequin, C. ; Gonon, P. ; Belostotskiy, Sergey ; Pender, J. ; Banola, S. ; Joubert, O. ; Nemani, Sirisha

Author_Institution

LETI, CEA, Grenoble, France

fYear

2013

fDate

13-15 June 2013

Firstpage

1

Lastpage

3

Abstract

Today porous SiOCH combined with metallic hard masking strategy is an integration of choice for advanced BEOL interconnect technology node. However in this context the main integration issue is the dielectric film sensitivity to fluorocarbon (FC) etch chemistry. In this study, new FC free etching chemistry has been proposed as breakthrough solution. Based on pattern and blanket film analyses, the benefits of this new chemistry is presented and discussed with respect to conventional FC etching. Its compatibility with metallic hard mask integration and wet cleaning is also evaluated.

Keywords

cleaning; dielectric materials; dielectric thin films; etching; integrated circuit interconnections; masks; porous materials; silicon compounds; wetting; FC free etch chemistry; SiOCH; advanced BEOL interconnect technology; blanket film analysis; dielectric film sensitivity; fluorocarbon free etch chemistry; metallic hard masking strategy; pattern film analysis; porous SiOCH film modification; wet cleaning; Chemistry; Cleaning; Etching; Films; Plasmas; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference (IITC), 2013 IEEE International

Conference_Location

Kyoto

Print_ISBN

978-1-4799-0438-9

Type

conf

DOI

10.1109/IITC.2013.6615591

Filename

6615591