Title :
Modeling of simultaneous switching ground noise for gallium arsenide DCFL drivers
Author :
Prince, Jerry L.
Abstract :
Simultaneous Switching Ground Noise (SSGN) is modeled for the Gallium Arsenide direct-coupled FET (DCFL) driver using the Statz metal-semiconductor FET (MESFET) device model. Further, transmission line loading characteristics of the driver are considered to accurately determine the degree of MESFET current saturation
Keywords :
III-V semiconductors; MESFET integrated circuits; direct coupled FET logic; driver circuits; field effect logic circuits; gallium arsenide; integrated circuit modelling; integrated circuit noise; GaAs; Statz MESFET device model; current saturation; gallium arsenide DCFL driver; simultaneous switching ground noise; transmission line loading;
Conference_Titel :
Electrical Performance of Electronic Packaging, 1996., IEEE 5th Topical Meeting
Conference_Location :
Napa, CA
Print_ISBN :
0-7803-3514-7
DOI :
10.1109/EPEP.1996.564805
