Title :
High-frequency, long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors
Author :
Strittmatter ; Kollakowski, St. ; Droge, E. ; Bottcher, E.H. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Resonant-cavity-enhanced InP/InGaAs metal-semiconductor-metal photodetectors for high-frequency and high-efficiency operation at 1.31 /spl mu/m wavelength under rear illumination are demonstrated. An external quantum efficiency of 77% and a 3-dB bandwidth of 10 GHz are achieved with an InGaAs absorber thickness of 300 nm.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; infrared detectors; light absorption; metal-semiconductor-metal structures; optical receivers; optical resonators; photodetectors; /spl mu/m wavelength; 1.31 mum; 10 GHz; 300 nm; 77 percent; InGaAs; InGaAs absorber thickness; InP-InGaAs; InP-InGaAs metal-semiconductor-metal photodetectors; MSM photodetectors; external quantum efficiency; high-efficiency operation; high-frequency; high-frequency long-wavelength resonant-cavity-enhanced InGaAs MSM photodetectors; rear illumination;
Conference_Titel :
Optical Communication, 1996. ECOC '96. 22nd European Conference on
Conference_Location :
Oslo, Norway
Print_ISBN :
82-423-0418-1
