Title :
High dynamic range SiGe downconverter with power efficient 50 Ω IF output buffer
Author_Institution :
Atmel, Heilbronn, Germany
Abstract :
This paper presents the design and measurement results of a high dynamic range down conversion mixer intended for use e.g. in W-CDMA. basestations. The mixer has been realized in Atmel´s 50 GHz ft=fmax foundry SiGe technology. Power matching resistors at all three ports provide excellent broadband power match without need for external matching networks. Measured key performance parameters are a single sideband noise figure (SSB NF) of 12.9 dB, an output referred third order intercept point (OIP3) of +30.1 dBm and an output referred compression point (P-1dB) of +17.1 dBm.
Keywords :
Ge-Si alloys; UHF frequency convertors; UHF integrated circuits; UHF mixers; bipolar analogue integrated circuits; buffer circuits; impedance matching; semiconductor materials; 12.9 dB; 50 GHz; 50 ohm; SiGe; UHF frequency conversion; W-CDMA basestations; analog integrated circuits; broadband power matching; down conversion mixer; high dynamic range downconverter; microwave bipolar integrated circuits; port power matching resistors; power efficient IF output buffer; Amplitude modulation; Dynamic range; Foundries; Germanium silicon alloys; Multiaccess communication; Noise figure; Noise measurement; Radio frequency; Resistors; Silicon germanium;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE
Print_ISBN :
0-7803-8333-8
DOI :
10.1109/RFIC.2004.1320680