DocumentCode :
3282943
Title :
Controlled Selective Epitaxy for 3-D LSI
Author :
Zhang, X.X. ; Cho, H.S. ; Xianyu, W.X. ; Yin, H.X. ; Noguchi, T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
76
Lastpage :
77
Keywords :
Crystallization; Dry etching; Epitaxial growth; Gas insulation; Gas lasers; Large scale integration; Semiconductor films; Substrates; Surface contamination; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595985
Filename :
1595985
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3282943
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