Analytical Modeling of Short-Channel Multi-Gate SOI MOSFETs with Special Emphasis on the Partially-Depleted and Fully-Depleted Surrounding Gate Transistor

In this paper, we have developed a novel two dimensional (2D) analytical approach to modeling the 2D electrostatics and the threshold voltage occurring within short-channel multi-gate SOI MOSFETs based on extensive and necessary modifications made to the widely used quasi-2D parabolic potential modeling scheme. In this abstract, we will pay special attention to the electrostatic potential distributions and threshold voltage for the short-channel partially-depleted (PD) and fully-depleted (FD) surrounding gate transistor (SGT) (Takato et al., 1991 and Milyamo et al., 1992)