DocumentCode :
3283151
Title :
Novel Flash Memory Cell with a Channel Multi-Gate Transistor
Author :
Wang, W.C. ; Ko, Y.-H. ; Tang, M. ; Chang, S.T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
101
Lastpage :
102
Keywords :
Channel hot electron injection; Electronics industry; FinFETs; Flash memory cells; Hot carrier injection; Industrial electronics; Low voltage; Nonvolatile memory; Silicon; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1595998
Filename :
1595998
Link To Document :
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