DocumentCode
3283151
Title
Novel Flash Memory Cell with a Channel Multi-Gate Transistor
Author
Wang, W.C. ; Ko, Y.-H. ; Tang, M. ; Chang, S.T.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
101
Lastpage
102
Keywords
Channel hot electron injection; Electronics industry; FinFETs; Flash memory cells; Hot carrier injection; Industrial electronics; Low voltage; Nonvolatile memory; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1595998
Filename
1595998
Link To Document