DocumentCode
3283158
Title
Effects of Channel Doping Profile on Electrical Characteristics of Impact Ionization MOS
Author
Hwang, Sang Joon ; Yoon, Jee-Young ; Kang, Ey Goo ; Sung, Man Young
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
103
Lastpage
104
Keywords
Doping profiles; Electric variables; Impact ionization; MOSFETs; Power dissipation; Power engineering and energy; Subthreshold current; Temperature; Thermal conductivity; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1595999
Filename
1595999
Link To Document