Title :
High-Voltage SiC and GaN Devices for Power Electronics Applications
Keywords :
Commercialization; Gallium nitride; Materials reliability; Power electronics; Rectifiers; Silicon carbide; Thyristors;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596031
