Title :
Interface Characterization of Molecular-Monolayer/SiO/sub 2/ Based Molecular Junctions
Author :
Richter, C.A. ; Hacker, C.A. ; Richter, L.J. ; Kirillov, O.A. ; Vogel, E.M.
Author_Institution :
Semicond. Electron. Div., National Inst. of Stand. & Technol., Gaithersburg, MD
Abstract :
The properties of monolayers of molecules on thin SiO2 are of great interest for future hybrid Si-molecular device technologies. We present here a correlation of the results of dc-current-voltage (IV) and capacitance-voltage (CV) measurements with vibrational spectroscopy of metal/monolayer/SiO2/Si structures to establish an improved understanding of the interactions at the buried metal/monolayer and dielectric/silicon interfaces
Keywords :
electric properties; interface states; molecular electronics; monolayers; silicon compounds; SiO2; buried metal-monolayer interface; capacitance-voltage measurements; dc-current-voltage measurement; dielectric-silicon interface; interface characterization; molecular junctions; molecular monolayer; vibrational spectroscopy; Capacitance measurement; Capacitors; Computer hacking; Dielectric measurements; Dielectric thin films; Gold; NIST; Silicon; Vibration measurement; Voltage;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Conference_Location :
Bethesda, MD
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596070
