DocumentCode :
3284278
Title :
Reliability optimization for wide bandgap devices: Recent developments in high-spatial resolution thermal imaging of GaN devices
Author :
Kuball, M. ; Uren, M.J. ; Martin, T.
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
246
Lastpage :
247
Keywords :
Aluminum gallium nitride; Gallium nitride; HEMTs; High-resolution imaging; Image resolution; MODFETs; Phonons; Photonic band gap; Spatial resolution; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596076
Filename :
1596076
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3284278
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