Title :
Analysis of the Biasing Conditions and Latching Operation for Si/SiGe Resonant Interband Tunnel Diode Based Tunneling SRAM
Author :
Sudirgo, S. ; Pawlik, D.J. ; Rommel, Sean L. ; Kurinec, S.K. ; Thompson, P.E. ; Berger, P.R.
Keywords :
Current density; Diodes; Germanium silicon alloys; Logic; Low voltage; Random access memory; Resonance; Silicon germanium; Tin; Tunneling;
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
DOI :
10.1109/ISDRS.2005.1596122
