• DocumentCode
    3285121
  • Title

    Effect of Channel Doping Levels in LDMOSFET on the Transfer Characteristic of CMOS Inverter

  • Author

    Kim, Nam-Soo ; Lee, Hyung-Gyoo ; Cuizhiyuan

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    356
  • Lastpage
    357
  • Keywords
    Application specific integrated circuits; CMOS digital integrated circuits; Doping; Electrical resistance measurement; Immune system; Impurities; Inverters; Low voltage; MOSFET circuits; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596133
  • Filename
    1596133
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285121