• DocumentCode
    3285162
  • Title

    A Subthreshold Drain Current Model for Deep Submicron Pocket Implanted MOSFETs

  • Author

    Baishya, S. ; Mallik, A. ; Sarkar, C.K.

  • fYear
    2005
  • fDate
    Dec. 7-9, 2005
  • Firstpage
    360
  • Lastpage
    361
  • Keywords
    CMOS technology; Doping; Logic circuits; MOSFETs; Power engineering and energy; Predictive models; Semiconductor process modeling; Subthreshold current; Telecommunications; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Device Research Symposium, 2005 International
  • Print_ISBN
    1-4244-0083-X
  • Type

    conf

  • DOI
    10.1109/ISDRS.2005.1596135
  • Filename
    1596135
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3285162