DocumentCode
3285187
Title
Numerical Modeling and Characterization of n-Channel 4H-SiC Double-Diffused Vertical Power MOSFET
Author
Wu, Jianzhou ; Potbhare, Siddharth ; Goldsman, Neil ; Lelis, Aivars
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
366
Lastpage
367
Keywords
Doping profiles; MOSFET circuits; Numerical models; Photonic band gap; Power MOSFET; Scattering; Silicon carbide; Thermal conductivity; Thermal resistance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596138
Filename
1596138
Link To Document