DocumentCode
3285291
Title
First Principle Study of Si and Ge Band Structure for UTB MOSFETs Applications
Author
Low, Tony ; Feng, Y.P. ; Li, M.-F. ; Samudra, G. ; Yeo, Y.C. ; Bai, P. ; Chan, L. ; Kwong, D.L.
fYear
2005
fDate
Dec. 7-9, 2005
Firstpage
384
Lastpage
385
Keywords
Atomic layer deposition; Effective mass; Lattices; Linear discriminant analysis; MOSFETs; Photonic band gap; Semiconductor films; Semiconductor thin films; Thin film devices; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Device Research Symposium, 2005 International
Print_ISBN
1-4244-0083-X
Type
conf
DOI
10.1109/ISDRS.2005.1596147
Filename
1596147
Link To Document