DocumentCode :
3285519
Title :
Investigation of Ni Induced Deep Levels in N-Type Si by a Temperature Dependence of Piezoelectric Photothermal and Surface Photovoltage Signals
Author :
Sato, Shoichiro ; Fukushima, Shin-ichi ; Tanaka, Shuji ; Sakai, Kentaro ; Fukuyama, Atsuhiko ; Ikari, Tetsuo
fYear :
2005
fDate :
Dec. 7-9, 2005
Firstpage :
410
Lastpage :
411
Keywords :
Electric variables measurement; Glass; Indium tin oxide; Materials science and technology; Nickel; Radiative recombination; Signal generators; Silicon; Substrates; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Device Research Symposium, 2005 International
Print_ISBN :
1-4244-0083-X
Type :
conf
DOI :
10.1109/ISDRS.2005.1596160
Filename :
1596160
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3285519
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