DocumentCode
3286103
Title
A novel CMOS color pixel for vision chips
Author
Fu, Qiuyu ; Zhang, Wancheng ; Lin, Qingyu ; Wu, Nanjian
Author_Institution
Inst. of Semicond., Chinese Acad. of Sci., Beijing, China
fYear
2009
fDate
25-28 Oct. 2009
Firstpage
1640
Lastpage
1643
Abstract
This paper presents a novel CMOS color pixel with a 2D metal-grating structure for real-time vision chips. It consists of an N-well/P-substrate diode without salicide and 2D metal-grating layers on the diode. The periods of the 2D metal structure are controlled to realize color filtering. We implemented sixteen kinds of the pixels with the different metal-grating structures in a standard 0.18 ¿m CMOS process. The measured results demonstrate that the N-well/P-substrate diode without salicide and with the 2D metal-grating structures can serve as the high speed RGB color active pixel sensor for real-time vision chips well.
Keywords
CMOS image sensors; diodes; image colour analysis; 2D metal structure; 2D metal-grating structure; CMOS color pixel; CMOS process; N-well/P-substrate diode; color filtering; high speed RGB color active pixel sensor; real time vision chips; size 0.18 mum; CMOS image sensors; CMOS process; Color; Filtering; Filters; Image sensors; Photodiodes; Pixel; Semiconductor diodes; Sensor arrays;
fLanguage
English
Publisher
ieee
Conference_Titel
Sensors, 2009 IEEE
Conference_Location
Christchurch
ISSN
1930-0395
Print_ISBN
978-1-4244-4548-6
Electronic_ISBN
1930-0395
Type
conf
DOI
10.1109/ICSENS.2009.5398508
Filename
5398508
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