DocumentCode :
3286506
Title :
A 31.2% locking range K-band divide-by-6 injection-locked frequency divider using 90 nm CMOS technology
Author :
Chun-Ching Chan ; Tsung-Hsien Lin ; Hong-Yeh Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Jhongli, Taiwan
fYear :
2015
fDate :
17-22 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
A 31.2% locking range K-band divide-by-6 frequency divider with regenerative injection-locked topology is proposed using 90 nm CMOS process in this paper. The circuit is composed of a singly balanced mixer and a divide-by-5 injection-locked frequency divider (ILFD). The proposed frequency divider features high division, high speed, and wide locking range. The measured locking range is 7.1 GHz with an input power of -5 dBm. The measured output power and phase noise at 1 MHz offset are -5 dBm and -138.7 dBc/Hz, respectively This work has the widest locking range with good input sensitivity among the reported millimeter-wave ILFDs with division ratio higher than or equal to 5.
Keywords :
CMOS analogue integrated circuits; field effect MMIC; frequency dividers; CMOS technology; K-band frequency divider; balanced mixer; divide-by-five injection locked frequency divider; divide-by-six injection locked frequency divider; locking range frequency divider; size 90 nm; CMOS integrated circuits; Frequency conversion; Frequency measurement; Gallium arsenide; Radio frequency; Radiofrequency integrated circuits; Topology; CMOS; frequency divider; high speed; microwave and millimeter-wave (MMW); wide locking range;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium (IMS), 2015 IEEE MTT-S International
Conference_Location :
Phoenix, AZ
Type :
conf
DOI :
10.1109/MWSYM.2015.7166893
Filename :
7166893
Link To Document :
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