An accurate and efficient surface scattering model for Monte Carlo device simulation

A new efficient model for electron surface scattering in Si/SiO₂ MOS structures for Monte Carlo device simulation compatible with quantum correction of the carrier density is presented. The model is based on simplified physics-based equations for nonlocal surface roughness scattering and surface phonons scattering rates. Some model parameters are adjusted and a few additional terms are introduced to match the relevant measurements. The simulation model reproduces the measured low-field effective mobility vs. effective field curves with excellent accuracy including the temperature dependence. Device simulations of a MOS transistor with the new surface scattering model and additional effects (contact resistances and self-heating) were performed. The results were compared to the measurements and simulation results from a classical device simulator (drift-diffusion and hydrodynamic model) with an equivalent quantum correction and similar surface mobility model.