Title :
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs
Author :
Meneghesso, G. ; Mion, A. ; Neviani, A. ; Matloubian, M. ; Brown, J. ; Hafizi, M. ; Takyiu Liu ; Canali, C. ; Pavesi, M. ; Manfredi, M. ; Zanoni, E.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
On- and off- state breakdown effects in composite channel and conventional InP-based HEMTs are studied by means of electrical measurements, and electroluminescence spectroscopy. We demonstrate that channel quantization increases off-state and on-state breakdown voltage. The temperature coefficient of the electron impact ionization rate in In/sub 0.53/Ga/sub 0.47/As has been studied. Differently from what happens in GaAs-based devices, carrier multiplication increases on increasing the temperature.
Keywords :
III-V semiconductors; electroluminescence; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; microwave field effect transistors; In/sub 0.53/Ga/sub 0.47/As-InP; InP; InP-based HEMT; carrier multiplication; channel quantization; composite channel HEMT; electrical measurements; electroluminescence spectroscopy; electron impact ionization rate; off-state breakdown voltage; on-state breakdown voltage; temperature coefficient; temperature effect; Electric breakdown; Electric variables measurement; Electroluminescence; Electrons; HEMTs; Impact ionization; MODFETs; Quantization; Spectroscopy; Temperature;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553118
