0.12 /spl mu/m hole pattern formation by KrF lithography for Giga bit DRAM

Author

Nakao, S. ; Nakae, A. ; Yamaguchi, A. ; Kimura, H. ; Ohno, Y. ; Matsui, Y. ; Hirayama, M.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

61

Lastpage

64

Abstract

Dense 0.10 /spl mu/m hole pattern formation has been achieved by optical lithography with KrF wavelength. Double exposure utilizing two alternative phase shift masks of lines and spaces patterns produces dense small hole images with enough focus and exposure latitude. Applying this method with a KrF stepper and chemically-amplified negative-tone resist, a 2-dimensional 0.13 /spl mu/m hole array with a pitch of 0.40 /spl mu/m has been resolved with 1.0 /spl mu/m DOF, and resolution limit size and pitch are less than 0.10 /spl mu/m and 0.28 /spl mu/m, respectively.

Keywords

DRAM chips; ULSI; image resolution; krypton compounds; optical focusing; phase shifting masks; photolithography; 0.12 /spl mu/m hole pattern formation; 0.12 mum; 2D hole array; KrF; KrF lithography; KrF stepper; ULSI; chemically-amplified negative-tone resist; dense small hole images; double exposure; exposure latitude; focus latitude; giga bit DRAM; optical lithography; phase shift masks; pitch; resolution limit size; Fabrication; Focusing; Integrated optics; Lithography; Optical attenuators; Optical devices; Pattern formation; Random access memory; Resists; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553122

Filename

553122