Title :
The effect of interconnect scaling and low-k dielectric on the thermal characteristics of the IC metal
Author :
Banerjee, K. ; Amerasekera, A. ; Dixit, G. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The effect of interconnect scaling and low-k dielectric on the thermal characteristics of interconnect structures has been characterized for the first time under DC and pulsed current conditions. It is shown that under DC conditions the thermal impedance of metal lines increases by about 10% when low-k dielectric is used as the gap fill. The critical current density for the low-k structures under pulsed condition is shown to be about 10-30% lower than that of standard dielectric structures depending on metal and pulse widths.
Keywords :
current density; dielectric thin films; failure analysis; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; thermal resistance; DC conditions; IC metal; TiN-AlCu-TiN; critical current density; double level metallization; gap fill; interconnect scaling; interconnect structures; low-k dielectric; metal lines; pulsed current conditions; thermal characteristics; thermal impedance; Delay; Dielectric materials; Dielectrics and electrical insulation; Guidelines; Heating; Impedance; Integrated circuit interconnections; Metallization; Space vector pulse width modulation; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553123
