Modeling of local reduction in TiSi/sub 2/ and CoSi/sub 2/ growth near spacers in MOS technologies: influence of mechanical stress and main diffusing species

Author

Fornara, P. ; Poncet, A.

Author_Institution

France Telecom, CNET, Meylan, France

fYear

1996

fDate

8-11 Dec. 1996

Firstpage

73

Lastpage

76

Abstract

This paper presents an improved model for the simulation of silicide growth by either silicon or metal diffusion. For the first time, the shape of TiSi/sub 2/ and CoSi/sub 2/ layers, especially near spacer edges and on top of polysilicon lines, has been accurately simulated using mechanical stress effects. Furthermore, the importance of correctly simulating the silicidation to obtain accurate contact resistances is shown.

Keywords

MOS integrated circuits; chemical interdiffusion; cobalt compounds; contact resistance; integrated circuit metallisation; semiconductor process modelling; semiconductor-metal boundaries; stress effects; surface topography; titanium compounds; CoSi/sub 2/ growth; CoSi/sub 2/-Si; MOS technologies; Si diffusion; TiSi/sub 2/ growth; TiSi/sub 2/-Si; contact resistances; local growth reduction modelling; main diffusing species; mechanical stress; metal diffusion; polysilicon lines; self-aligned silicide process; silicidation; silicide growth model; simulation; spacer edges; Atomic layer deposition; CMOS technology; Equations; Inorganic materials; Shape control; Silicidation; Silicides; Silicon; Space technology; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1996. IEDM '96., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-3393-4

Type

conf

DOI

10.1109/IEDM.1996.553125

Filename

553125