Title :
Neutron SEU trends in avionics [memory chips]
Author :
Kerness, Nicole ; Taber, Allen
Author_Institution :
Lockheed Martin Federal Syst., Owego, NY, USA
Abstract :
Accelerator (proton and neutron) measurements of 44 memory device vintages, along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMs), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset
Keywords :
CMOS memory circuits; DRAM chips; SRAM chips; aircraft computers; avionics; integrated circuit reliability; neutron effects; sensitivity analysis; DRAM; SRAM; atmospheric neutron single event upset; avionics; dynamic RAM; memory devices; neutron SEU trends; neutron measurements; proton measurements; static RAM; Aerospace electronics; CMOS technology; Military aircraft; Neutrons; Performance evaluation; Protection; Proton accelerators; Random access memory; Single event upset; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629800
