Title :
Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs
Author :
Sharma, Ashok K. ; Sahu, Kusum
Author_Institution :
NASA Goddard Space Flight Center, Greenbelt, MD, USA
Abstract :
This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages
Keywords :
DRAM chips; EPROM; SRAM chips; integrated circuit testing; integrated memory circuits; radiation effects; space vehicle electronics; 3.3 V; 5 V; DRAMs; EEPROMs; NASA programs; SRAMs; ceramic packages; commercial high density memories; flash memories; low dose rate; plastic packages; total ionizing dose testing; Annealing; EPROM; Earth Observing System; Extraterrestrial measurements; Flash memory; Manufacturing; NASA; Performance evaluation; Plastic packaging; Testing;
Conference_Titel :
Radiation Effects Data Workshop, 1997 IEEE
Conference_Location :
Snowmass Village, CO
Print_ISBN :
0-7803-4061-2
DOI :
10.1109/REDW.1997.629804
