Title :
High efficiency LDMOS power FET for low voltage wireless communications
Author :
Ma, G. ; Burger, W. ; Dragon, C. ; Gillenwater, T.
Author_Institution :
Commun. Products Lab., Motorola Inc., Tempe, AZ, USA
Abstract :
High efficiency, high gain power transistors are required to meet RF performance and output specifications as new generation portable communication products move towards lower voltage operations. A low cost, high efficiency silicon MOSFET using RFLDMOS (LV2) technology was developed in Motorola to operate at 3.4-12.5 V drain voltages. The LV2 device can deliver 70% power added efficiency with 12 dB gain, 31.5 dBm output power at 3.4 V and 850 MHz. This is the best known RF performance for silicon devices at 3.4 V. This paper focuses on 3.4 V LV2 device optimization and performance.
Keywords :
UHF field effect transistors; elemental semiconductors; mobile radio; power MOSFET; power field effect transistors; silicon; 12 dB; 3.4 to 12.5 V; 70 percent; 850 MHz; LDMOS power FET; LV wireless communications; LV2 device optimisation; Motorola; RF performance specifications; RFLDMOS technology; Si; Si MOSFET; high efficiency power FET; high gain power transistors; portable communication products; Costs; FETs; Low voltage; MOSFET circuits; Performance gain; Power generation; Power transistors; Radio frequency; Silicon; Wireless communication;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553129
