DocumentCode
3290276
Title
High efficiency 600-mW pHEMT balance amplifier design with load pull technique
Author
Anand, Lokesh ; Kumar, Narendra ; Pragash, Sangaran ; Ain, M.F. ; Hassan, S.I.S.
Author_Institution
Eng. Campus, Univ. of Sci. Malaysia, Minden
fYear
2008
fDate
2-4 Dec. 2008
Firstpage
483
Lastpage
486
Abstract
This paper provides suitable design method to achieve high efficiency of single balanced amplifier based on load pull technique. The device technology is using pseudomorphic High Mobility Electron Transistor (pHEMT) having gate-width of 6400-mum. Power-aided-efficiency (PAE) of 60-70 %, output power of 1 W and gain of 14 dB for the entire range 1-1.5 GHz is achieved at simulation level. Degradation of 30 % of PAE, 4 mW of output power and 5 dB of gain have been experienced at measurement level.
Keywords
power HEMT; power amplifiers; frequency 1 GHz to 1.5 GHz; load pull technique; pHEMT balance amplifier design; power 1 W; power 4 mW; power 600 mW; power-aided-efficiency; pseudomorphic high mobility electron transistor; Design methodology; Gain; Impedance matching; Mirrors; PHEMTs; Power amplifiers; Power generation; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-2866-3
Electronic_ISBN
978-1-4244-2867-0
Type
conf
DOI
10.1109/RFM.2008.4897432
Filename
4897432
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