DocumentCode :
3290580
Title :
Role of surface states in field emission from silicon
Author :
Huang, Qing-An
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fYear :
1996
fDate :
7-12 Jul 1996
Firstpage :
149
Lastpage :
154
Abstract :
Field emission from surface states is modelled and numerically estimated. Field emission current from surface states is dominant at lower fields while field emission current from the conduction band is dominant at higher fields due to insufficient electrons supplied for surface states
Keywords :
electron field emission; elemental semiconductors; silicon; space charge; surface states; vacuum microelectronics; Si; conduction band; field emission current; surface states; Charge carrier processes; Electron emission; Impurities; Microelectronics; Poisson equations; Silicon; Space charge; State estimation; Surface cleaning; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
Type :
conf
DOI :
10.1109/IVMC.1996.601794
Filename :
601794
Link To Document :
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