DocumentCode :
3290587
Title :
Influence of thermally annealed Schottky metal contact on DC and RF behavior of n-GaN Schottky diode
Author :
Munir, T. ; Abdul Aziz, A. ; Abdullah, M.J. ; Ain, M.F.
Author_Institution :
Sch. of Phys., Univ. Sains Malaysia, Minden
fYear :
2008
fDate :
2-4 Dec. 2008
Firstpage :
202
Lastpage :
205
Abstract :
In this paper we discuss the influence of thermally annealed Schottky metal contact on DC and RF characteristics of n-GaN Schottky diode. The fabrication of n-GaN Schottky diode started with mesa mask RIE etching and then lift off Al as an ohmic contact annealed at 400degC in N2 ambient for 10 min. For Schottky contact lift off Pt, Ni and Pd Schottky metal annealed from 400degC to 600degC for 10 min. DC analysis shows that thermally annealed Pt Schottky metal contact on n-GaN at 400degC improved the (I-V) characteristics maximum barrier height (PhiB) 1.10 eV, ideality factor (eta) 1.001 and high breakdown voltage with low leakage current as compared to the Pd and Ni Schottky metal contact. While for RF analysis, s-parameters were calculated up to 10 GHz by using two-port network. Results show that thermally annealed Pt Schottky metal contact shows lower insertion losses as compared to Pd and Ni Schottky metal contact.
Keywords :
III-V semiconductors; S-parameters; Schottky barriers; Schottky diodes; aluminium; annealing; gallium compounds; microwave diodes; nickel; ohmic contacts; palladium; platinum; sputter etching; wide band gap semiconductors; GaN; Ni; Pd; Pt; RF analysis; Schottky diode fabrication; Schottky metal annealing; insertion loss; mesa mask RIE etching; ohmic contact; s-parameters; temperature 400 C to 600 C; thermally annealed Schottky metal contact; time 10 min; Annealing; Etching; Fabrication; Leakage current; Ohmic contacts; Radio frequency; Schottky barriers; Schottky diodes; Thermal factors; Time of arrival estimation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
RF and Microwave Conference, 2008. RFM 2008. IEEE International
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-2866-3
Electronic_ISBN :
978-1-4244-2867-0
Type :
conf
DOI :
10.1109/RFM.2008.4897447
Filename :
4897447
Link To Document :
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