• DocumentCode
    3290697
  • Title

    Narrow linewidth 894 nm distributed feedback lasers with laterally-coupled ridge-waveguide surface gratings fabricated using nanoimprint lithography

  • Author

    Dumitrescu, M. ; Telkkala, J. ; Karinen, J. ; Laakso, A. ; Viheriala, J. ; Leinonen, T. ; Lyytikäinen, J. ; Toikkanen, L. ; Pessa, M.

  • Author_Institution
    Optoelectron. Res. Centre, Tampere Univ. of Technol., Tampere, Finland
  • Volume
    01
  • fYear
    2010
  • fDate
    11-13 Oct. 2010
  • Firstpage
    131
  • Lastpage
    141
  • Abstract
    The paper presents the modelling and design particularities of laterally-coupled distributed feedback lasers (LC-DFB), the fabrication process, involving a highly productive and cost-effective UV-nanoimprint lithography technique, and the characteristics obtained up to now for the LC-DFB lasers fabricated for pumping Cesium atomic clocks. 550 μm long LC-DFB lasers, emitting at 894 μm, had 10 mA threshold currents and maintained over 40dB side-mode-suppression-ratio between 10 and 100°C. The measured self-homodyne spectrum indicated a linewidth below 1.3 MHz for AR/HR-coated 1000 μm long LC-DFB lasers and the simulations indicate that the use of phase-shift sections could reduce the linewidth below 250 kHz.
  • Keywords
    diffraction gratings; distributed feedback lasers; nanolithography; optical couplers; optical fabrication; optical phase shifters; ridge waveguides; semiconductor lasers; ultraviolet lithography; waveguide lasers; UV-nanoimprint lithography; laterally-coupled ridge-waveguide surface gratings; narrow linewidth distributed feedback lasers; phase-shift sections; pumping Cesium atomic clocks; selfhomodyne spectrum; side-mode-suppression-ratio; temperature 10 degC to 100 degC; threshold currents; wavelength 894 nm; Couplings; Gratings; Optical coupling; Optical refraction; Optical variables control; Refractive index; Surface emitting lasers; distributed feedback lasers; nanoimprint lithography; surface gratings;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2010 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-827X
  • Print_ISBN
    978-1-4244-5783-0
  • Type

    conf

  • DOI
    10.1109/SMICND.2010.5649034
  • Filename
    5649034