Title :
A continuous compact MOSFET model for SOI with automatic transitions between fully and partially depleted device behavior
Author :
Sleight, J.W. ; Rios, R.
Author_Institution :
Digital Equipment Corp., Hudson, MA, USA
Abstract :
A fully continuous compact SOI model for circuit simulations, that automatically accounts for the correct body depletion condition, is presented. Unlike previously reported models that are derived for either fully-depleted (FD) or partially-depleted (PD) devices, the model described here accounts for the possible transitions between FD and PD behavior during the device operation.
Keywords :
MOSFET; circuit analysis computing; semiconductor device models; silicon-on-insulator; SOI; Si; automatic transitions; body depletion condition; circuit simulations; continuous compact MOSFET model; fully depleted device behavior; partially depleted device behavior; Body regions; Dielectric substrates; Doping; Electrostatics; Isolation technology; MOSFET circuits; Permittivity; Poisson equations; Semiconductor films; Voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.553141
