Title :
High-performance Deep Submicron Mosts With Polycrystalline-(Si, Ge) Gates
Author :
Ponomarev, Y.V. ; Salm, C. ; Schmitz, J. ; Woerlee, P.H. ; Gravesteijn, D.J.
Keywords :
CMOS process; Doping; Laboratories; MOSFETs; Manufacturing processes; Optical films; Rapid thermal annealing; Scattering; Subthreshold current; Threshold voltage;
Conference_Titel :
VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on
Conference_Location :
Taipei, Taiwan
Print_ISBN :
0-7803-4131-7
DOI :
10.1109/VTSA.1997.614918
