DocumentCode :
329142
Title :
A New Etching Method For Single Crystal Al2O3 Film On Si Using Si Ion Implantation
Author :
Ishida, Makoto ; Kim, Hoon ; Kimura, Takayuki ; Nakamura, Tetsuro
Author_Institution :
Toyohashi Unliv of Technology
Volume :
1
fYear :
1995
fDate :
25-29 Jun 1995
Firstpage :
87
Lastpage :
90
Keywords :
Acceleration; Actuators; Chemical vapor deposition; Crystallization; Etching; Ion implantation; Semiconductor films; Stability; Surface contamination; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN :
91-630-3473-5
Type :
conf
DOI :
10.1109/SENSOR.1995.717097
Filename :
717097
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=329142
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