مرکز منطقه ای اطلاع رساني علوم و فناوري - Combination Effects Of Nitrogen Implantation At S/D Extension And N/sub2/0 Oxide On 0.18/spl mu/m n- and p- And P-MOSFETs

DocumentCode :

3291516

Title :

Combination Effects Of Nitrogen Implantation At S/D Extension And N/sub2/0 Oxide On 0.18/spl mu/m n- and p- And P-MOSFETs

Author :

Chao, T.S. ; Chien, C.H. ; Chiao, S.K. ; Lin, H.C. ; Liaw, M.C. ; Chen, L.P. ; Huang, T.Y. ; Lei, T.F. ; Chang, C.Y.

fYear :

1997

fDate :

3-5 June 1997

Firstpage :

316

Lastpage :

319

Keywords :

Boron; Capacitors; Charge pumps; Current measurement; Degradation; Design for quality; MOSFETs; Nitrogen; Oxidation; Stress;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

VLSI Technology, Systems, and Applications, 1997. Proceedings of Technical Papers. 1997 International Symposium on

Conference_Location :

Taipei, Taiwan

ISSN :

1524-766X

Print_ISBN :

0-7803-4131-7

Type :

conf

DOI :

10.1109/VTSA.1997.614919

Filename :

614919

Link To Document :