DocumentCode

329166

Title

Gallium Doping For Silicon Etch Stop In Koh

Author

Senna, Jose R. ; Smith, Rosemary L.

Author_Institution

LAS, Instituto de Pesquisas Espaciais

Volume

1

fYear

1995

fDate

25-29 Jun 1995

Firstpage

194

Lastpage

197

Keywords

Anisotropic magnetoresistance; Boron; Capacitive sensors; Doping; Etching; Gallium; Ion implantation; Lattices; Microstructure; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on

Print_ISBN

91-630-3473-5

Type

conf

DOI

10.1109/SENSOR.1995.717136

Filename

717136