Title :
The influence of substrate on the potential barrier formation for the electrons tunnelling from the thin semiconductor films
Author :
Chenko, L. G Il ; Chenko, V. V Il
Author_Institution :
Inst. of Surface Chem., Acad. of Sci., Kiev, Ukraine
Abstract :
The size dependence of the penetration field effect contribution on the barrier formation for cold electron emission from a superthin semiconductor film is investigated in the case of metal or semiconductor substrate. It is shown that the film thickness decrease is accompanied by the effort of the base substrate bulk parameters influence: the free carriers bulk concentrations, their effective mass, the static dielectric constant
Keywords :
electron field emission; semiconductor thin films; tunnelling; cold electron emission; effective mass; electron tunnelling; free carrier bulk concentration; metal substrate; penetration field; potential barrier; semiconductor substrate; semiconductor thin film; static dielectric constant; Chemicals; Chemistry; Dielectric constant; Dielectric substrates; Electrons; Microelectronics; Semiconductor films; Stability; Threshold voltage; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location :
St. Petersburg
Print_ISBN :
0-7803-3594-5
DOI :
10.1109/IVMC.1996.601810
