Title :
Impact of TiN metal gate thickness and the HfSiO nitridation on MuGFETs electrical performance
Author :
Rodrigues, M. ; Mercha, A. ; Simoen, E. ; Collaert, N. ; Claeys, C. ; Martino, J.A.
Author_Institution :
IMEC, Heverlee
Abstract :
In this work, we investigate the impact of post-deposition nitridation of the MOCVD HfSiO gate dielectric and the TiN gate electrode thickness on the electrical parameters of SOI multiple-gate FETs (MuGFETs). It is shown that nitridation reduces the EOT, enhances the gate leakage current and reduces the mobility. Although, HfSiON gate dielectric can reduce the work function (WF) sensitivity on the TiN metal gate electrode thickness.
Keywords :
MOCVD coatings; carrier mobility; field effect transistors; hafnium compounds; leakage currents; semiconductor device metallisation; titanium compounds; work function; EOT; HfSiO; MOCVD; MuGFET electrical performance; SOI multiple gate FET; TiN; gate dielectric; gate leakage current; metal gate thickness; post deposition nitridation; work function sensitivity; Capacitance; Dielectric substrates; Electrodes; High K dielectric materials; High-K gate dielectrics; Leakage current; MOCVD; Optical films; Threshold voltage; Tin;
Conference_Titel :
Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on
Conference_Location :
Aachen
Print_ISBN :
978-1-4244-3704-7
DOI :
10.1109/ULIS.2009.4897568
