DocumentCode
329282
Title
Hydrogen-Sensitive Breakdown Voltage In The I-V Characteristics Of Tin Dioxide-based Semiconductors
Author
Egashira, Makoto ; Shimizu, Yasuhiro ; Takao, Yuji ; Fukuyama, Youichi
Author_Institution
Nagasaki University
Volume
1
fYear
1995
fDate
25-29 Jun 1995
Firstpage
718
Lastpage
721
Keywords
Additives; Conductivity; Electric variables measurement; Extraterrestrial measurements; Fabrication; Gold; Powders; Temperature sensors; Tin; Varistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Sensors and Actuators, 1995 and Eurosensors IX.. Transducers '95. The 8th International Conference on
Print_ISBN
91-630-3473-5
Type
conf
DOI
10.1109/SENSOR.1995.717332
Filename
717332
Link To Document