Sample variability and time stability in scaled silicon nanowires

Author

Pierre, M. ; Jehl, X. ; Wacquez, R. ; Vinet, M. ; Sanquer, M. ; Belli, M. ; Prati, E. ; Fanciulli, M. ; Verduijn, J. ; Tettamanzi, G.C. ; Lansbergen, G.P. ; Rogge, S. ; Ruoff, M. ; Fleischer, M. ; Wharam, D. ; Kern, D.

Author_Institution

CEA-DSM-INAC, CEA-Grenoble, Grenoble

fYear

2009

fDate

18-20 March 2009

Firstpage

249

Lastpage

252

Abstract

We explain variability observed for the resonant tunnelling transport through donors in scaled silicon nanowires by the influence of charge configuration changes at the edges between the channel and the source-drain regions. This charge configuration is remarkably robust with respect to ageing effects, thermal cycling and the associated Id-Vg characteristics at low temperature constitute a real ldquoelectro-fingerprintrdquo for the samples. This stability is prerequisite for applications based on the gate control of single donor orbitals in nanoscale CMOS devices.

Keywords

CMOS integrated circuits; elemental semiconductors; nanowires; resonant tunnelling; silicon; stability; Si; gate control; low temperature; nanoscale CMOS devices; real electro-fingerprint; resonant tunnelling transport; sample variability; scaled silicon nanowires; single donor orbitals; source-drain regions; time stability; Aging; Doping; Nanowires; Resonance; Resonant tunneling devices; Robustness; Silicon; Stability; Temperature dependence; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897583

Filename

4897583