I-V characteristics of volcano type Si FEAs with diamondlike carbon coating

Author

Kim, Han ; Choi, Young Whan ; Choi, Jeong Og ; Jeong, Hyo Soo ; Ahn, Saeyoung

Author_Institution

Inst. for Adv. Eng., Kyonggi-Do, South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

344

Lastpage

348

Abstract

We studied the field emission characteristics of DLC (Diamond-Like Carbon) coated Si tip FEAs (Field Emitter Arrays). A volcano shaped gate was fabricated in order to obtain a self-aligned structure. The Si tip was sharpened by conventional isotropic dry etching. The DLC thin film was uniformly deposited on Si tip emitters by PECVD. The gate aperture was defined by an Ar etch-back process of the photoresist planarization layer. We obtained the emission current of 10 μA/tip and it was found that DLC coating improved the I-V characteristics of Si tip FEAs. In addition, changes of emission characteristics were investigated with respect to the thickness and physical properties of DLC deposited on Si tip emitters

Keywords

carbon; current density; electron field emission; elemental semiconductors; plasma CVD coatings; silicon; sputter etching; vacuum microelectronics; Ar; Ar etch-back process; C-Si; DLC coating thickness; DLC thin film; I-V characteristics; PECVD; Si tip FEA; diamond-like carbon coating; field emission characteristics; field emitter arrays; isotropic dry etching; photoresist planarization layer; physical properties; self-aligned structure; volcano shaped gate; Apertures; Argon; Diamond-like carbon; Dry etching; Field emitter arrays; Planarization; Resists; Semiconductor thin films; Sputtering; Volcanoes;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601838

Filename

601838