• DocumentCode
    3293178
  • Title

    Low temperature reactive ion etching of silicon with SF6/O2 plasmas

  • Author

    Wells, T. ; El-Gomati, M.M. ; Wood, J. ; Johnson, S.

  • Author_Institution
    Dept. of Electron., York Univ., UK
  • fYear
    1996
  • fDate
    7-12 Jul 1996
  • Firstpage
    349
  • Lastpage
    353
  • Abstract
    An investigation of low temperature reactive ion etching of silicon to produce ultra small structures is presented. Plasmas containing SF6/O2 were used to etch silicon samples in the temperature range +25°C to -140°C. At low flow rates and temperatures the etching produces nearly anisotropic etching in agreement with predictions of the reactive spot model. At higher flow rates etching produced facetted features indicating higher chemical reactivity of the plasma with the silicon
  • Keywords
    elemental semiconductors; nanotechnology; silicon; sputter etching; -140 to 25 C; O2; SF6; SF6-O2; SF6/O2 plasmas; Si; anisotropic etching; facetted features; flow rates; low temperature RIE; reactive ion etching; reactive spot model; ultra small structures; vacuum microelectronic devices; Chemicals; Cooling; Electrodes; Etching; Plasma applications; Plasma chemistry; Plasma temperature; Silicon; Surface morphology; Temperature control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
  • Conference_Location
    St. Petersburg
  • Print_ISBN
    0-7803-3594-5
  • Type

    conf

  • DOI
    10.1109/IVMC.1996.601839
  • Filename
    601839
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3293178