A fully-LSI-process-compatible Si field emitter technology with high controllability of emitter height and sharpness

Author

Takemura, Hisashi ; Furutake, Naoya ; Nisimura, Miyo ; Tsuida, Syunji ; Yoshiki, Masayuki ; Okamoto, Akihiko ; Miyano, Soichiro

Author_Institution

NEC Corp., Sagamihara, Japan

fYear

1996

fDate

7-12 Jul 1996

Firstpage

363

Lastpage

366

Abstract

We developed a fully-LSI-process-compatible technology with excellent control of emitter shape for the first time. The fabricated emitter tip configuration has two-step-cone shape whose upper and lower cone configurations are controllable independently. While the upper parts determine the emitter tip sharpness and the apex angle, the lower parts determine the emitter height by utilizing two-step thermal oxidation for emitter tip sharpening in addition to anisotropic RIE for the emitter height control. The stable and uniform thermal oxidation for sharpening emitters realizes excellent uniformity, and the process without lift-off process is matched with Si LSI technology completely. The obtained 1944-tip emitter with 800 nm gate diameter showed low threshold voltage of 35 V

Keywords

elemental semiconductors; large scale integration; oxidation; silicon; vacuum microelectronics; 35 V; 800 nm; LSI-process-compatible technology; Si; apex angle; cone configurations; controllability; emitter height; emitter height control; emitter shape; emitter tip configuration; field emitter technology; gate diameter; lift-off process; threshold voltage; two-step thermal oxidation; two-step-cone shape; Anisotropic magnetoresistance; Controllability; Electrodes; Etching; Fabrication; Large scale integration; Oxidation; Semiconductor films; Shape control; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601842

Filename

601842