DocumentCode
3293248
Title
Fabrication of gated polycrystalline silicon field emitters
Author
Huq, S.E. ; Huang, M. ; Wilshaw, P.R. ; Prewett, P.D.
Author_Institution
Central Microstructure Fac., Rutherford Appleton Lab., Chilton, UK
fYear
1996
fDate
7-12 Jul 1996
Firstpage
367
Lastpage
370
Abstract
Polycrystalline silicon is currently being investigated as the cathode material for flat panel displays using field emission. Conventional silicon microfabrication techniques have been adapted to produce highly uniform arrays of gridded polysilicon field emitters
Keywords
cathodes; electron field emission; elemental semiconductors; flat panel displays; silicon; vacuum microelectronics; Si; cathode material; field emission; flat panel displays; gridded polysilicon field emitters; microfabrication techniques; uniform arrays; vacuum microelectronics; Chemicals; Coatings; Crystalline materials; Etching; Fabrication; Lithography; Plasma applications; Plasma chemistry; Resists; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International
Conference_Location
St. Petersburg
Print_ISBN
0-7803-3594-5
Type
conf
DOI
10.1109/IVMC.1996.601843
Filename
601843
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