A compact physical model for subthreshold current in nanoscale FD/SOI MOSFETs

Author

Moradinasab, Mahdi ; Ebrahimi, Behzad ; Fathipour, Morteza

Author_Institution

Dept. of Electr. & Comput. Eng., Univ. of Tehran, Tehran

fYear

2009

fDate

18-20 March 2009

Firstpage

321

Lastpage

324

Abstract

This paper presents a compact physical model for current-voltage characteristics of ultra-thin body (UTB) fully depleted (FD) silicon-on-insulator (SOI) MOSFETs in subthreshold region which accounts for quantum confinement effects (QCEs) as well as short channel effects (SCEs). Body region is modeled as an infinite potential well and carrier concentration is calculated accordingly. The model could be used for device and circuit applications such as yield estimation and static power approximation. Accuracy of the model was verified by simulation analysis in which coupled Poisson and Schrodinger equations were solved. Our analytical results show good agreement with simulation.

Keywords

MOSFET; Poisson equation; Schrodinger equation; carrier density; elemental semiconductors; semiconductor device models; silicon; silicon-on-insulator; Poisson equations; Schrodinger equations; Si; carrier concentration; compact physical model; current-voltage characteristics; infinite potential well; nanoscale fully depleted SOI MOSFET; quantum confinement effects; short channel effects; silicon-on-insulator; Analytical models; Body regions; Circuit simulation; Coupled mode analysis; Current-voltage characteristics; MOSFETs; Potential well; Silicon on insulator technology; Subthreshold current; Yield estimation; quantum effects; silicon-on-insulator (SOI); subthreshold current; ultra thin body (UTB);

fLanguage

English

Publisher

ieee

Conference_Titel

Ultimate Integration of Silicon, 2009. ULIS 2009. 10th International Conference on

Conference_Location

Aachen

Print_ISBN

978-1-4244-3704-7

Type

conf

DOI

10.1109/ULIS.2009.4897600

Filename

4897600