Infrared characteristics of ni-doped ZnO thin films

Author

Jiang, Jinghua ; He, Dawei ; Wang, Yongsheng ; Fu, Ming ; Feng, Bin ; Changbin Ju ; Du, Yufan

Author_Institution

Key Lab. of Luminscence & Opt. Inf., Beijing Jiaotong Univ., Beijing, China

fYear

2009

fDate

6-10 July 2009

Firstpage

589

Lastpage

591

Abstract

Ni-doped ZnO(ZnO:Ni)thin film had been studied widely as a ferromagnetic semiconductor, but there are far fewer studies on its infrared characteristics. This paper describes experiments in which Ni-doped ZnO thin films were deposited on quartz glass using a sol-gel process with different sintering temperatures. The infrared characteristics and the effects of the different fabrication processes were investigated using various techniques including X-ray diffraction (XRD), SEM and FT-IR.

Keywords

Fourier transform spectra; II-VI semiconductors; X-ray diffraction; ferromagnetic materials; infrared spectra; magnetic thin films; nickel; scanning electron microscopy; semiconductor thin films; semimagnetic semiconductors; sintering; sol-gel processing; wide band gap semiconductors; zinc compounds; FT-IR spectra; SEM; SiO₂; X-ray diffraction; XRD; ZnO:Ni; ferromagnetic semiconductor; quartz glass; sintering; sol-gel process; thin films; Fabrication; Glass; Semiconductor films; Semiconductor thin films; Sputtering; Temperature; Transistors; X-ray diffraction; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 2009. IPFA 2009. 16th IEEE International Symposium on the

Conference_Location

Suzhou, Jiangsu

ISSN

1946-1542

Print_ISBN

978-1-4244-3911-9

Electronic_ISBN

1946-1542

Type

conf

DOI

10.1109/IPFA.2009.5232578

Filename

5232578