A new fabrication process of volcano-shaped field emitters for large-area display applications

Author

Lee, Chun Gyoo ; Park, Byung Gook ; Lee, Jong Duk

Author_Institution

Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., South Korea

fYear

1996

fDate

7-12 Jul 1996

Firstpage

384

Lastpage

387

Abstract

A new fabrication process has been proposed and demonstrated for micron-sized volcano field emitters. The key element of the process is forming the volcano-shaped thin film emitter by sputtering technique, resulting in the even thinner emission sites due to the shadowing effect of the masking oxide disc. For the emitter array with 1.5-μm-diameter gate apertures, an anode current of 0.1 μA per emitter was obtained at the gate voltage of about 88 V. The emission performance is comparable to that of the Spindt-type field emitter with the same gate hole size

Keywords

electron field emission; large screen displays; masks; sputtering; vacuum microelectronics; 0.1 muA; 1.5 micron; 88 V; Spindt-type field emitter; anode current; emission sites; emitter array; fabrication process; gate apertures; gate hole size; gate voltage; large-area display applications; masking oxide disc; shadowing effect; sputtering technique; thin film emitter; volcano-shaped field emitters; Fabrication; Flat panel displays; Shadow mapping; Silicon; Sputter etching; Sputtering; Substrates; Throughput; Volcanoes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1996. IVMC'96., 9th International

Conference_Location

St. Petersburg

Print_ISBN

0-7803-3594-5

Type

conf

DOI

10.1109/IVMC.1996.601847

Filename

601847